Abstract
The diffusion of Pt into Si at temperatures between 800 and 1000°C has been found to provide room-temperature minority-carrier lifetimes between 1 µsec and 10 nsec. Evaluation of the dependence of lifetime on ambient temperature and on majority carrier doping as well as the measurement of thermally stimulated currents indicate the presence of two recombination centers: an acceptor located 0.26 eV below the conduction band edge for n-type Si and a donor located 0.32 eV above the valence band edge for p-type Si.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
