Abstract

For advanced equipment control, two schemata of real-time fault detection were performed using machine learning algorithms in silicon etching in SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> /O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ar plasma. Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to find the root cause of the anomaly in the process parameters. Fault detection and control is also demonstrated to predict the shift of the process parameter along the amount of process gas flow rate injected into the chamber, considering a fault. Especially, plasma information (PI), such as electron temperature and electron density, was derived from OES data into equation-based corona model. These were utilized to evaluate which process parameter is the most significantly affecting on the performance of the established model through Shapley value in fault detection and control. By the combination of isolation forest algorithm for finding the plasma abnormalities in real time and Adaboost algorithm for classifying root causes of faults, the suggested algorithm could accurately detect the root cause. DeepSHAP algorithm helped not only the prediction of gas flow rate, but PI was identified as critical parameter, interpreting the model through Shapley value. We propose a new multi-function integrated algorithm by the ensemble algorithms.

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