Abstract

An approach for high-throughput rapid screening of chemical vapor deposition (CVD) materials using micromachined silicon microheater arrays is described. To illustrate this approach, titanium dioxide was deposited by CVD, using titanium(IV) nitrate and titanium(IV) isopropoxide at temperatures between 130 and 815 °C. Deposition was confined to the microhotplate elements within 4- and 16-element arrays. Film microstructure was examined by scanning electron microscopy. In situ electrical measurements were made with integrated microcontacts during the deposition of TiO2 using titanium(IV) isopropoxide. A novel approach using temperature-programmed deposition with temperature ramp rates up to 800 °C/s was also employed for microstructure modification during deposition. Additionally, the steep temperature gradients present on the microhotplate supports have been demonstrated to provide an excellent platform for investigating temperature-dependent microstructures.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call