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Abstract
Wet cleaning of wafers during the semiconductor production process often requires uniform removal of a few nanometers of material. Ideally, a single cleaning chemistry can be found that etches all exposed features at a comparable rate. Etch rates near 1 nm/min are desired for batch process and near 10 nm/min for single-wafer processes. A mixture of 500:1 DHF (dilute HF) with dissolved oxygen controlled near parts-per-million (ppm) levels has been found to meet these requirements for post copper CMP (chemical-mechanical polishing) cleans with exposed SiO2 and Cu metal.
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