Abstract
The possible usage of BiFeO3 (bismuth ferrite) in MOS (metal-oxide-semiconductor) based radiation sensors was studied. Gamma radiation effects on the electrical characteristics of BiFeO3 MOS capacitors were investigated in detail. BiFeO3 thin films were deposited on p (100)-type silicon wafers with a thickness of 300nm by magnetron sputtering. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated using a Co-60 gamma source from 0.5 to 16Gray at a dose rate of 0.0030Gy/s. Capacitance–Voltage measurements were recorded prior to and after irradiation and the effects of radiation were determined from the mid-gap and flat-band voltage shifts. The results show that BiFeO3 has a good response to gamma irradiation and can be used as a new material for future dielectric applications such as radiation sensors.
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