Abstract
The use of Al 2O 3 dielectric in MOS based radiation sensors has been investigated. Their response has been compared with conventional MOS capacitors with a SiO 2 dielectric. The study includes gamma radiation effects with dose up to 4 Gy. The effect of radiation has been determined from the valance band shift in C– V curves. The amount of charge induced by the radiation has been calculated and compared with the response of MOS capacitors with SiO 2 with the same and different thicknesses. Fading properties have been studied and compared. Results show that MOS capacitors with Al 2O 3 dielectric exhibit sensitivity greater than that obtained from MOS capacitors with SiO 2. This higher sensitivity is attributed to higher trapping efficiency in the Al 2O 3 layer.
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