Abstract
The sensitivity to backgate biasing of two MESFET designs, one with an implanted surrounding p-ring and one without, were compared. A highly resistive p-like surface layer, possibly arising from the uncapped anneal, is thought to be the agent of the backgating. The addition of the surrounding p-ring results in greatly decreased backgate biasing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
