Abstract
Abstract The effects of using a rough GaP layer to improve the light efficiency of 860-nm GaAs vertical-cavity surface-emitting laser were investigated. The light efficiency was significant increased by enlargement of current flow path caused from use of GaP layer grown on the top distributed Bragg reflector (DBR) of VCSEL. Furthermore, it was found that improved light efficiency significantly could be further increased by optimizing the surface morphology of the p-GaP layer fabricated in limited surface lighting area of VCSEL. Various surface morphologies could be obtained easily by controlling the RF power of an ICP dry etching. The highest output power of 34 mW was obtained from the VCSEL with a rough GaP layer fabricated at a RF power of 40 W introduced with BCl3 gas, showing a noticeable increase of ∼113% than a conventional one (16 mW). This result clearly insists that light efficiency of 860-nm GaAs based VCSEL could be increased effectively by using the rough GaP layer.
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