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Abstract
H-terminated Si surfaces serve as the starting surface for hetero-epitaxial growth. The presence of oxygen on the wafer surface can significantly reduce the epitaxial layer quality. The oxygen present on the surface is, among others, determined by the re-oxidation of the surface during the queuing between cleaning and epitaxy. In this paper we report on the use of a N2-purged FOUP to reduce the re-oxidation of Si surfaces.
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