Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodes

Abstract

This paper reports the use of a unique double-diffused guard ring Schottky barrier diode. The electrical characteristics of the conventional Schottky barrier diode are compared with the single and double guard ring devices. It is shown that both guard ring devices give near ideal I–V characteristics by eliminating the edge effects inherent with metal-semiconductor contacts. It is also shown that the double guard ring structure maintains the fast recovery time of the Schottky diode to higher current levels than the single ring structure by suppression of minority carrier injection.