Abstract
Oxygen fixation during dry oxidation of silicon was investigated using 18O labelling. We found that the amount of oxygen fixed near the outer surface of the oxide was not notably influenced by the silicon oxidation rate at the Si-SiO2 interface. To show this, we oxidized in 18O2 nitrogen-implanted Si16O2-Si structures (for which interfacial oxidation is inhibited) and unimplanted Si16O2-Si structures. We compared 18O fixation near the outer surface in both cases.
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