Abstract
U3S5 has been prepared by chemical transport reaction and investigated using X-ray powder diffraction, FTIR spectroscopy, electrical resistivity measurements, and X-ray photoelectron spectroscopy. U3S5 is a semiconductor with a thermal band gap Eg=78.1(4) meV (298 K<T<50 K), which closes gradually to 3.4(4) meV for T<25 K. Photoelectron spectroscopy on single crystals of U3S5 and β-US2 suggest a mixed valency of uranium in U3S5. Physical and structural data are consistent with a mixed-valent model (U3+)2U4+ (S2−)5. A brief survey of literature data on crystal structure and physical properties of uranium sulfides and selenides is given.
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