Upwind block-centered multistep differences for semiconductor device problem with heat and magnetic influences

Abstract

In this paper, a mathematical model of semiconductor device with two important factors is discussed. Heat and magnetic influences are considered together. Its numerical approximation is important in information science and other technological innovation fields. The major physical unknowns (the potential, electron concentration, hole concentration, and the heat) are defined by four nonlinear PDEs: an elliptic equation, two convection-diffusion equations and a heat conductor equation. A conservative block-centered method is used to approximate the elliptic equation. The derivatives to time t, ∂∂t(⋅), are discretized by multistep differences for improving the computational accuracy. The diffusions and convection terms are treated by block-centered differences and upwind approximations, respectively. This composite numerical method is suitable for this nonlinear system. Firstly, numerical dispersion and nonphysical oscillations are avoided. Secondly, the unknowns and their adjoint vectors are obtained simultaneously. Thirdly, the law of conservation is preserved. An error estimates is derived. Finally, simple examples are given for showing the efficiency and accuracy.