Abstract
The ultraviolet photoelectron spectroscopy (UPS) method was used in an investigation of the processes of silver film growth with thicknesses in the range θ = 0-10 monolayers (ML) at temperatures of 10 and 300 K on the (110) faces of A3B5 cleaved in high vacuum. A study was also made of the influence of heating the sample to room temperature after evaporation of Ag at 10 K. For Ag/GaAs and Ag/InAs the chemical interaction between deposited atoms and substrate is suppressed at LT. In contrast, for InP the interaction weakly depends on temperature. The Ag 4d peak obtained at LT from Ag/InSb is probably composed of two components corresponding to quasiamorphous and b.c.c. Ag.
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