Abstract
AbstractMeasurements are reported of the dependence of the upper critical field Hc 2 on the concentration and configuration of Frenkel defects in niobium. The defects were produced by low‐temperature irradiation with 3 MeV electrons and subsequent annealing treatments. The results qualitatively confirm a theory by Eilenberger which predicts that Hc 2 not only depends on the electronic mean free path but also on the ratio between s‐ and p‐wave scattering of the defects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
