Abstract
We investigate the low-temperature upconversion electroluminescence (UCEL) in GaAs p-i-n diodes with a layer of self-assembled InAs quantum dots (QDs) in the intrinsic region (i). Injection of carriers into the QD states at an applied bias well below the flatband condition results in near-band-edge GaAs electroluminescence, i.e., emission of photons with energies much larger than that supplied by the applied voltage and the thermal energy. We attribute the UCEL to an Auger-like recombination process and discuss its influence on carrier thermalization processes and the effect of an applied magnetic field.
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