Abstract
Zn3Ga2(GexSn1-x)O8:Yb,Er,Cr phosphors with different doping ratio of Ge/Sn were prepared by high temperature solid-state method. After excited at 270nm with a xenon lamp for 15min, the persistent luminescence (PL) of Zn3Ga2(GexSn1-x)O8:Yb,Er,Cr phosphor can last more than 60min. Under the excitation at 980nm, Zn3Ga2(GexSn1-x)O8:Yb,Er,Cr phosphors can generate effective up-conversion emissions from Er3+ ions at 410nm, 525nm, 550nm, 660nm and Cr3+ ions around 700nm. Besides, after ceasing irradiation, Zn3Ga2(GexSn1-x)O8:Yb,Er,Cr phosphors show up-conversion persistent luminescence (UCPL) from Cr3+ ions around 700nm. Moreover, Zn3Ga1.995(Ge0.3Sn0.7) O8:Yb3+,Er3+,Cr3+ phosphor is optimal with the best persistent luminescent and up-conversion persistent luminescent properties. In short, owing to the long afterglow time, strong up-conversion emissions and novel up-conversion persistent luminescence, the as-prepared Zn3Ga2(GexSn1-x)O8:Yb,Er,Cr phosphors can be potentially applied in a wide range of fields, such as security materials, coating materials, infrared detection, fluorescent label, tracer and testing.
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