Abstract
Silicon carbide (SiC), the quintessential semiconductor material, poses an acute challenge to the realization of highly efficient ultra-precision processing. This study has investigated the effect of the combined ratio of sodium silicate and manganese dioxide on the polishing rate and surface roughness of 4H–SiC in chemical mechanical polishing (CMP). The synergistic mechanism of sodium silicate and manganese dioxide on slurry spreading performance and particle dispersion stability is characterized by surface wettability, surface tension, scanning electron microscopy, zeta potential analysis and X-ray photoelectron spectroscopic. Based on the above studies, the synergistic mechanism of sodium silicate and manganese dioxide on the CMP of 4H–SiC is attributed to the improvement of the suspension stability of the abrasive as well as the oxidizing ability of the slurry.
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