Abstract

AbstractDoping in luminescent metal halides has become an effective strategy for tailoring the optoelectronic properties. Herein, Cu+ is introduced into Rb2AgBr3 to design the synthesis of Rb2AgBr3:xCu+, which possess cold‐white light emission at room‐temperature without changing the spectral profiles; however, the Cu+ incorporation significantly enhances the photoluminescence quantum efficiency to 98.8% in Rb2AgBr3:0.05Cu+. Additionally, a high scintillation light yield of up to 79 250 photons MeV−1 and a low detection limit of 714.83 nGy s−1 have been achieved via this Cu+ doping engineering. X‐ray imaging with a spatial resolution of up to 5.8 lp mm−1 is further realized using a large scintillator film prepared by mixing polydimethylsiloxane with Cu+ doped Rb2AgBr3 scintillators. This study provides a Cu+ doping design principle for improving both the photoluminescence and scintillation performances of metal halides.

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