Abstract
The article demonstrates the design and modelling of CuGaTe2 direct bandgap (1.18 eV) chalcopyrite-based photodetector (PD), which has superb optical and electronic characteristics and shows remarkable performance on the photodetector. The photodetector has been investigated throughout the work by switching width, carrier and defect densities of particular layers and also the interface defect density of particular interfaces. The various layers have been optimized for the higher performance of the PD. Also, the impression of various device resistances has been analyzed. The JSC and VOC of the heterostructure photodetector is found to be 38.27 mA/cm2 and 0.94 V, in turn. The maximum responsivity, R and detectivity, D* are found to be 0.663A/W and 1.367 × 1016 Jones at a wavelength of 920 nm. The spectral response has a very high value in the range of 800 to 1000 nm light wavelength, which confirmed that this device is capable of detecting the near infrared (NIR) region of light. This work gives important guidance for the manufacture of CGT material-based photodetectors with higher performance.
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