Abstract
Transition metal dichalcogenide (TMDC) materials are considered extremely efficient materials with significant applications in photovoltaics and optoelectronics. Here, the electronic structure and optoelectronic features of new transition metal-containing dichalcogenides are studied using state-of-the-art density functional theoretical calculations. For the analysis of the electronic band structures, we employed a modified Becke-Johnson potential. According to the band structure analysis, Platinum-based dichalcogenides possess an indirect band profile, having the valence band maximum and the conduction band minimum situated at discrete symmetry regions. At the same time, the zirconium-based materials have a direct type band structure at the same Γ-point. We calculated cohesive energies and formation energies to assess the stability of these materials. The substantial optical parameters such as the two parts of the dielectric constant, absorption coefficients, energy loss functions, reflectivity spectra, refractive index, real optical conductivity spectra, spectra, and the extinction coefficients, are calculated. These findings provide insight into potential applications in optoelectronic devices. The calculated band gaps and refractive index revealed an inverse relationship. This research aims to make a significant contribution to the advancement of various and possibly gainful semiconducting technologies, as well as their practical applications.
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