Unveiling a geometric angstrom era of transistors: Physical gate length scaled down to one atom thickness

Abstract

The world shortest gate length transistor was born using MoS2 as channel and the edge of graphene as gate, exhibiting on/off ratios up to 1.02 × 105 and subthreshold swing values down to 117mVdec−1. This work unveils that the geometric Angstrom era of transistors has come into reality. However, there is still a long way to go for the sub-1 nm- Lg transistors form the lab to the fab.