Abstract
Pb islands grown on the anisotropic Si(111)-In(4×1) were studied using scanning tunneling microscopy and spot profile analysis–low energy electron diffraction. Anisotropic wire shapes with a uniform island height of four layers due to quantum size effects are observed as well as a preferred width of 6.6nm. Unlike islands grown on clean and Pb covered Si(111), Pb islands grown on the Si(111)-In(4×1) reconstructed surface maintain a height of four layers to room temperature. The increased temperature stability enhances the potential use of the grown structures for technological applications.
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