Abstract
We report unusual n-type doping of monolayer WSe2 by CF4 plasma treatment. Photoluminescence/Raman/x-ray photoelectron spectroscopy measurements implied electron-doping of mechanically-exfoliated WSe2 after CF4 plasma treatment. Such n-type doping is probably due to the use of mild process conditions resulting in Se-deficient monolayer WSe2 with negligible concentration of electronegative F atoms after CF4 plasma treatment. Transistor performance of monolayer WSe2 also confirmed n-type doping by CF4 plasma treatment. These results demonstrate that CF4 plasma treatment under mild process conditions can be an alternative n-type doping method of monolayer WSe2 and other transition metal dichalcogenides for device integration.
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