Abstract
The temperature dependence of the development of the Sb/GaAs electronic properties has been found to be quite small, compared to that seen with a large number of metal/GaAs interfaces studied previously. This has been correlated with the relatively small change in interface morphology due to reducing the temperature. The interface morphology and the Fermi level movement at the Sb/GaAs(110) interface were studied using photoelectron spectroscopy at room temperature and low temperature (80 K). The Sb/GaAs interface is uniform and abrupt at two temperatures. Two distinct Fermi level pinning positions are observed: 0.75 eV for n-type GaAs and 0.5 eV for p-type GaAs above the valence-band maximum independent of the temperature. The results are discussed in terms of mechanisms of Schottky barrier formation.
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