Unusual electrochemical properties of boron and silicon Co-doped diamond electrodes

Abstract

Boron-doped diamond (BDD) films exhibit exceptional physicochemical properties and have been utilized in numerous fields. As a common impurity in diamond, silicon is inevitably introduced into the diamond lattice during certain growth process. However, there are limited reports on the impact of silicon co-doping on the electrochemical properties of BDD electrodes. In this paper, we prepared a series of BDD electrodes with various silicon contents and made a systematic evaluation of these electrodes in terms of physicochemical properties. The results indicated that silicon and boron co-doped diamond (SiBDD) electrodes displayed a broader potential window and lower background current compared to the pure BDD electrode. Additionally, we observed that the electron transfer rate of the electrodes in the inner ([Fe(CN)6]3−/4−) redox systems exhibited a rising trend with increasing silicon content, whereas the electron transfer rate of the outer ([Ru(NH3)6]3+/2+) redox systems displayed contrasting trend. Surface analyses and electrochemical measurements results suggested that the unusual phenomena might stem from the alterations in surface functional groups and carrier density of the electrode inducing by silicon co-doping. In general, our results demonstrate, for the first time, that Si co-doping can influence the surface functional groups and carrier behavior of BDD electrodes, thereby altering the electrode's electrochemical performance. This provides new insights for the design of high-performance diamond electrodes.