Abstract
We theoretically consider the diamagnetic response of an InAs/GaAs asymmetrical nano-ring and asymmetrical quantum dot molecule when external magnetic field is applied in the system’s growth directions. We use the effective one-electronic-band Hamiltonian (energy-position-dependent electron effective mass and g-factor approximation) with smooth full three-dimensional confinement potentials mapping actual strain and material content in those nano-objects. This approach allows us to simulate and study physical properties of semiconductor nano-objects within a wide range of change in geometry and parameters. Although the geometries of the systems investigated are very different, we found for both systems a similar magnetic response. At low temperature the single electron differential magnetic susceptibility has a positive peak and with temperature increasing the peak remain Lorenzt-like shaped and gradually disappear.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
