Abstract
We report on measurements of current-resistance effects in ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}$ ultrathin films deposited by molecular beam epitaxy. dc transport and voltage noise spectral density analyses have been performed in the temperature range of $10--300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, and the results are compared with existing theoretical models. A possible connection between the explanation of the electrical transport properties and the two-level tunneling systems model, used for the voltage noise analysis, is proposed.
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