Abstract
We theoretically investigate the microwave third-harmonic generation (THG) produced by free carriers in the conduction band of electrostatically doped phosphorene. It is assumed that a plane polarized microwave of frequency ω is incident normally on the phosphorene layer deposited on a dielectric substrate. Using an extremely simple model for the phosphorene’s anisotropic electronic structure, we calculate the power P(3ω) of the third harmonic wave generated in the reflected direction for the two principal cases of polarization of the incident radiation either along the ‘armchair’ () direction or along the ‘zigzag’ () one. Our results for and reveal an unusual anisotropy in the output THG power: the ratio varies from values less than 1 to values greater than 1 with an increase in the frequency ω at a fixed value of the electron density n S controlled by an external gate voltage. The effect predicted may be useful in providing a THG functionality in microwave devices, such as frequency multipliers and up-convertors, needed for developing high data rate communication links.
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