Abstract
Two-dimensional (2D) materials have opened new avenues for the fabrication of ultrathin, transparent, and flexible functional devices. However, the conventional inorganic graphene analogues are either semiconductors or insulators with low electronic conductivity, hindering their use as supercapacitor electrode materials, which require high conductivity and large surface area. Recently, 2D charge density wave (CDW) materials, such as 2D chalcogenides, have attracted extensive attention as high performance functional nanomaterials in sensors, energy conversion, and spintronic devices. Herein, TaS2 is investigated as a potential CDW material for supercapacitors. The quantum capacitance (CQ) of the different TaS2 polymorphs (1T, 2H, and 3R) was estimated using density functional theory calculations for different numbers of TaS2 layers and alkali-metal ion (Li, Na and K) intercalants. The results demonstrate the potential of 2H- and 3R-polymorphs as efficient negative electrode materials for supercapacitor devices. The intercalation of K and Na ions in 1T-TaS2 led to an increase in the CQ with the intercalation of Li ions resulting in a decrease in the CQ. In contrast, Li ions were found to be the best intercalant for the 2H-TaS2 phase (highest CQ), while K ion intercalation was the best for the 3R-TaS2 phase. Moreover, increasing the number of layers of the1T-TaS2 resulted in the highest CQ. In contrast, CQ increases upon decreasing the number of layers of 2H-TaS2. Both 1T-MoS2 and 2H-TaS2 can be combined to construct a highly performing supercapacitor device as the positive and negative electrodes, respectively.
Highlights
Two-dimensional (2D) materials have opened new avenues for the fabrication of ultrathin, transparent, and flexible functional devices
Density functional theory (DFT) allows for energy calculations of different compounds and structures and estimating the electronic density of states (DOS), which is very useful for extracting quantum related properties form the system under investigation, such as electron diffusivity, transport, conductivity, and quantum capacitance (CQ)
CQ has been considered a key factor in determining the overall capacitance and storage mechanism in 2D materials, especially graphene,[27] MoS2,28–30 doped graphene,[23,31,32,33] WS2, and TaS2.18,34,35 In this work a CQ estimation is performed based on the simulated DOS and Fermi statistics, where the DOS dependence on the shi in Fermi level is transferred to the Fermi function to extrapolate the calculations for room temperature under different applied gate voltages using eqn (1) and (2):[36,37,38,39,40]
Summary
Two-dimensional (2D) materials have opened new avenues for the fabrication of ultrathin, transparent, and flexible functional devices. Paper stability.[14] As a typical polymorphic TMD, TaS2 has been extensively studied for its charge density wave (CDW) and superconductivity characteristics,[17,18,19,20,21,22,23,24] making it a prompting functional material in energy storage devices.
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