Unraveling the role of boron dimers in the electrical anisotropy and superconductivity in boron-doped diamond

Abstract

We use quantum mechanics (QM) to determine the states formed by B dopants in diamond. We find that isolated B sites prefer to form BB dimers and that the dimers pair up to form tetramers (BBCBB) that prefer to aggregate parallel to the (111) surface in the <110> direction, one double layer below the H-terminated surface double layer. These tetramers lead to metallic character (Mott metal Insulator Transition) with holes in the valence band near the Γ point and electrons in the BBCBB tetramer promoted band along the X direction. Our experiments find very significant anisotropy in the superconductivity for boron-doped diamond thin films prepared with Microwave Plasma Assisted Chemical Vapor Deposition using deuterium-rich plasma. This leads to much higher conductivity in the X direction than the Y direction, as predicted by the QM. This phase transition to the anomalous phase is linked with the emergence of boson quantum entanglement states behaving as a bosonic insulating state. These anisotropic superconducting properties of the diamond film might enable applications such as single-photon detectors. We expect that this formation of a dirty superconductivity state is related to the BBCBB tetramers found in our QM calculations.