Abstract
AbstractA method is presented to analyze XPS spectra recorded from thin (<5 nm) oxide layers with known thickness on corresponding metal substrates. With this method, the contribution of the oxide overlayer can be separated from the metal substrate for the metal core level line, even when the difference in binding energy between metallic and oxidic electrons is small. This method involves the fitting of Doniach‐Sunjic (DS) line shapes for the metallic and oxidic state to the measured spectrum, where the area ratio between the metallic and oxidic contribution is fixed through the known thickness.The method was applied to ruthenium single crystals with a (0001) surface that were oxidized in a ultra‐high vacuum (UHV) chamber at a temperature of 673 K and an oxygen pressure between 1 × 10−4 and 1 × 10−2 Pa. Analysis of the oxidic contribution to the Ru 3p3/2 line shows that two different types of oxides can be formed in the oxidation process. Copyright © 2008 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
