Unraveling the mechanism of photo-induced surface enhanced Raman scattering on ZnO/Au thin films

Abstract

Surface-enhanced Raman scattering (SERS) is a powerful technique for detecting pollutants. Recent studies have shown that the sensitivity of SERS can be further improved by using appropriate light excitation before or during Raman measurements, a phenomenon known as photo-induced enhanced Raman scattering (PIERS). In this study, we developed a highly sensitive SERS substrate by fabricating a ZnO/Au thin film using radio frequency magnetron sputtering and post-annealing processes. The resulting substrate exhibited high crystallinity and high sensitivity for pollutant detection. The study found that in situ UV excitation significantly enhanced the Raman signal, up to 5.5 times more efficiently than the traditional SERS technique. The excitation process was reversible, leading to a quick recovery of the Raman intensity to its initial level when the UV excitation was turned off. This relaxation process is attributed to the recombination of electrons and holes. The investigation shows that ZnO/Au thin films was able to detect fungicide thiram with a limit of detection of 10−8 M. PIER also helps to lower the detection threshold down to 10−9 M.