Unraveling the atomic-level vacancy modulation in Cu9S5 for NIR-driven efficient inhibition of drug-resistant bacteria: Key role of Cu vacancy position

Abstract

Cu9S5 possesses high hole concentration and potential superior electrical conductivity as a novel p-type semiconductor, whose biological applications remain largely unexploited. Encouraged by our recent work that Cu9S5 has enzyme-like antibacterial activity in the absence of light, which may further enhance the near infrared (NIR) antibacterial performance. Moreover, vacancy engineering can modulate the electronic structure of the nanomaterials and thus optimize their photocatalytic antibacterial activities. Here, we designed two different atomic arrangements with same VCuSCu vacancies of Cu9S5 nanomaterials (CSC-4 and CSC-3) determined by positron annihilation lifetime spectroscopy (PALS). Aiming at CSC-4 and CSC-3 as a model system, for the first time, we investigated the key role of different copper (Cu) vacancies positions in vacancy engineering toward optimizing the photocatalytic antibacterial properties of the nanomaterials. Combined with the experimental and theoretical approach, CSC-3 exhibited stronger absorption energy of surface adsorbate (LPS and H2O), longer lifetime of photogenerated charge carriers (4.29 ns), and lower reaction active energy (0.76 eV) than those of CSC-4, leading to the generation of abundant ·OH for attaining rapid drug-resistant bacteria killed and wound healed under NIR light irradiation. This work provided a novel insight for the effective inhibition of drug-resistant bacteria infection via vacancy engineering at the atomic-level modulation.