Abstract
Two-photon photoemission is used to identify the unoccupied dimer-bond state on the Si(001) surface at an energy 2.83 eV above the valence-band maximum. A strong resonance enhancement is found for excitation from the occupied dangling-bond state. The azimuthal and polarization dependence proves the orientation of the observed state along the dimer axis. The dispersion is dominated by the occupied initial state described by $\ensuremath{-}0.50$ free-electron masses in one- and two-photon photoemission.
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