Unlocking The Potential of Gallium Nitride (Gan) For Third-Generation Semiconductors: Advantages, Applications, And Future Prospects

Abstract

Wide-bandgap materials, exemplified by gallium nitride (GaN), are poised to elevate electronic performance to new heights. This paper is focus on the third-generation semiconductor which is considered as the most promising semiconductor. The first section will discuss the fundamentals of CMOS and HEMT, including their construction, operation, benefits, and properties. The two are next be compared, and it is revealed that although GaN has some limitations on its cost and manufacture, it also having higher energy gap, compact size, higher efficiency, lower switching losses. Meeting the increasingly rigorous requirements associated with high power and high-density applications requires the use of these advantages. Then, using examples from the aerospace, mobile phone chargers, and LiDAR fields, applications of GaN HEMTs are discussed. The issues and prospects for third generation semiconductors are finally went over. It shows significant potential for energy efficiency benefits in infrastructure, and it is intriguing to see how the new semiconductor generation develops in the next few years.