Abstract

Silicon Nanowires (SiNWs) can be easily synthesized by following the two-step electroless metal-assisted chemical etching method. These SiNWs are well known for their low reflectivity due to their excellent light-harvesting characteristics. In this paper, we demonstrated the effect of plasma treatment time on the performance of SiNWs solar cells. The 1 min plasma-treated SiNWs/Poly 3,4-[ethylene dioxy thiophene:Polystyrene sulfonate] (PEDOT׃PSS) solar cell showed increased power conversion efficiency than the untreated SiNWs/PEDOT׃PSS solar cell. The photo Current density-Voltage (J-V) analysis showed that the open circuit voltage (VOC) of the plasma treated solar cell for 1 min is higher (270 mV) than that of the untreated solar cell (120 mV). The increase in the value of VOC comes from different factors׃ one is due to the formation of a good interface between the SiNWs and PEDOT׃PSS layer; other is the reduction of defect densities in SiNWs/PEDOT׃PSS heterojunction, consequently the reduction in the recombination processes. Hence from this research, we found that by controlling the plasma treatment on SiNWs, it can improve the SiNWs properties which can further improve the efficiency of the solar cell.

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