Abstract
In this paper, a compact model for the negative bias temperature instability (NBTI) is developed by considering the interface-state generation and the hole-trapping mechanisms. This model shows accurate reproduction of the threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) degradations measured from samples fabricated with different dielectric materials as well as processes. A total of eight model parameters are introduced for describing the different degradation origins. The parameter values are verified to exhibit universal properties as a function of the electrical field within the gate oxide (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> ). By implementing the universal NBTI model into the compact model HiSIM, the dynamic NBTI effect and circuit performance degradation can be predicted.
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