Abstract
A set of semi-empirical expressions for the two-center integrals which enter the Slater-Koster parameters are constructed for Group III–V compound semiconductors These expressions show their explicit dependence on the atomic characteristics, on the dielectric constant, on the lomcity of solids, and also on the interatomic separations, and they are valid for atomic separations as far as second-neighbor distances For zero ionicity they reduce to those obtained previously by us for Group IV semiconductors The Slater-Koster parameters are then constructed from these expressions for the two-center integrals The band structures of various gallium and indium compounds are obtained and are compared with other theoretical calculations and with experimental photoemission results
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