Abstract
High-quality glass and phosphosilicate glass films have been deposited as low as 165 °C in hot and cold wall plasma-enhanced chemical-vapor deposition (PECVD) commercial reactors. The dependence of hydrogen incorporation, chemical stability in buffered oxide etch, and the inducement of hillock growth in underlying Al films upon the deposition conditions have been investigated. In both hot and cold wall commercial reactors a unique process has been developed at 165 °C to deposit glass films which exhibit properties not unlike PECVD glass deposited at 380 °C. Hillock growth induced in Al films during glass deposition is eliminated at 165 °C. Deposition rate, uniformity, etch rate, refractive index, particle and pinhole density, and film stress are reported.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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