Abstract
Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (Vth), subthreshold swing, ION/IOFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, ~106, and 8.4 cm2/V·s, respectively. A positive Vth shift of 2.25 V is achieved after 1-ms programming at 10 V, whereas a negative Vth shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.
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