Unique Porous Structures Supported by Anodic Treatments in Liquid Ammonia (-50°C, Patm)

Abstract

Since the first anodic porosification of semiconductors in the 1950s, numerous studies have reported a wide range of porous structures. The conditions used during the growth of pores can explain the shapes obtained but the growth mechanism and especially the influence of surface chemistry during the porosification still raise many questions. It is in this context that the contribution of liquid ammonia (-55°C, Patm) is significant. Indeed, this remarkable non-aqueous solvent allows, on the one hand, to obtain novel porous structures on III-Vsc, and on the other hand, it allows for the first time a specific and original interfacial chemistry, governed by the chemistry of nitrogen.