Abstract
Amorphous Ge2Sb2Te5 thin films doped with ZnO were prepared and their crystallization behaviors were investigated. Our results showed that thermal annealing of amorphous ZnO-Ge2Sb2Te5 nanocomposites produced face centered-cubic Ge2Sb2Te5-nanocrystals embedded between interfaces. An increase in crystallization temperature and electrical resistance ratio were attributed to the increase of specific interfacial energies and inhomogeneous strain at the oxide/Ge2Sb2Te5 interfaces. The formation of the interfaces not only accelerated crystallization, but also limited the grain growth due to the one-dimensional growth mode. We proposed a crystallization model to elucidate the derived kinetic mechanism of the nanocrystal growth in the Ge2Sb2Te5 matrix. These experimental observations suggest that ZnO-Ge2Sb2Te5 nanocomposites are a good candidate for the applications in phase change memory.
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