Abstract

One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.

Highlights

  • This issue will be further exacerbate when the selected cell is in the high resistance state (HRS), whereas all unselected cells are in the low resistance state (LRS)

  • The initial switching from HRS to LRS occurs at a positive voltage of ∼3 V with a compliance current (Icomp) of 5 μA that is adopted to avoid permanent dielectric breakdown of the devices

  • Unipolar Cu/HfO2/n-Si resistive random access memories (RRAMs) fabricated by magnetron sputtering exhibits a forming-free characteristic and excellent self-rectifying behavior

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Summary

Introduction

Due to their simple structure, low energy consumption, fast operation speed and especially high integration density, resistive random access memories (RRAMs) have been considered as one potential candidate for next-generation nonvolatile memories, i.e., RRAMs can be designed as crossbar architectures which possess the highest integration density in theory.[1,2,3,4] sneak current issue, which refers to the undesired current through unselected cells and leads to misreading when reading the selected cell, is still a tough obstacle in real application of crossbar RRAMs.[1,5] This issue will be further exacerbate when the selected cell is in the high resistance state (HRS), whereas all unselected cells are in the low resistance state (LRS). Unipolar resistive switching with formingfree and self-rectifying effects in Cu/HfO2/nSi devices

Results
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