Abstract
Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (>; 300), high switching speed ( <; 50 ns), low operation voltage ( <; 1.2 V), low switching power consumption ( <; 16 μW), nondestructive readout, and good reliability. Nanoscale graphitic filament formation and rupture alternately through the field-induced dielectric breakdown and thermal fuse effect, respectively, are proposed to be responsible for the resistance switching. The unipolar switching characteristics shown here suggest that DLC is one of the most promising material candidates for high-density and low-power nonvolatile memory applications.
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