Abstract
Resistive switching (RS) and electrical endurance characteristics of amorphous Sb2O5 films in Pt/Sb2O5/Pt and Sb/Sb2O5/Pt structures were examined. Although both structures showed unipolar RS characteristics with power consumption smaller than those of other various transition metal oxides by ∼ two orders of magnitude, enhanced electrical endurance was obtained when Sb was employed as the top electrode than when Pt was employed as the top electrode. This improvement was explained by the creation of Sb clusters in the Sb2O5 films through the diffusion of oxygen from Sb2O5 to the Sb layer and the suppression of excessive oxygen loss during conducting filament formation process by the Sb top electrode. Metallic Sb clusters in pristine Sb2O5 films were confirmed by X-ray photoelectron spectroscopy depth profiling measurements and Auger electron spectroscopy. From the results of current density variation as a function of sample area, it was confirmed that the RS properties of Sb2O5 were controlled by the localized conducting filament in Sb2O5; this finding was in agreement with the result of high resolution transmission electron microscopy. The RS properties of this pnictogen oxide material are discussed with the RS properties of other transition metal oxide materials.
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