Abstract
The resistive switching properties in the amorphous Lu2O3 films deposited by pulsed laser deposition have been investigated. Well unipolar switching behaviors of Pt/Lu2O3/Pt stacks were obtained. The memory cells exhibited a high resistance ratio over 1×103, fast programming speed within 30 ns, and no obvious degradation after an endurance of 300 switching cycles and a duration of 3.2×106 s. The first-principles calculation indicates that the oxygen vacancies in cubic Lu2O3 will form defective energy level below the bottom of conduction band, and reduce the band gap. The absence of grain boundaries in the amorphous Lu2O3 films helps us attribute the switching mechanism of such stacks to the possible redistribution of defects related to oxygen vacancies along the filamentary paths during the resistive switching process.
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