Abstract
A robust and reproducible resistance switching in iron substituted strontium titanate is reported which shows giant high to low resistance state ratio (∼105) and stable charge retention.
Highlights
Since last ve decades, the scaling performance of microelectronics successfully meets the prediction of Moore's law of doubling of transistors a er two years
There are two different switching phenomena that exist in the systems depending on the polarity of the stimulus voltage: bipolar resistive switching (BRS) and unipolar resistive switching (URS).[7]
We present a very stable and robust unipolar resistive switching (URS) behavior in a sol–gel synthesized perovskite Fe-doped SrTiO3 thin lm deposited by a spin coating technique on an indium tin oxide (ITO) electrode
Summary
Since last ve decades, the scaling performance of microelectronics successfully meets the prediction of Moore's law of doubling of transistors a er two years. We present a very stable and robust unipolar resistive switching (URS) behavior in a sol–gel synthesized perovskite Fe-doped SrTiO3 thin lm deposited by a spin coating technique on an ITO electrode.
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