Abstract
Unipolar resistive switching (URS) is observed in isolated Si–SiOx core–shell nanostructures. I–V characteristics recorded by a conductive atomic force microscope tip show SET and RESET processes with self compliance behavior. Hopping of carriers through defect states in the high resistance state (HRS) and space charge limited conduction in the low resistance state (LRS) are found to be the dominant carrier transport mechanisms in Si–SiOx core–shell nanostructures. URS between LRS and HRS may be attributed to the transition between hydrogen bridge (Si–H–Si) and hydrogen doublet (Si–HH–Si) defects. During RESET process, charge carriers tunnel through the nanostructure giving rise to oscillatory conduction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.