Abstract
We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300 nm has a typical unipolar resistance switching function, while the device with tBE = 10 nm or set CC = 100 mA exhibits threshold switching. The experimental results are discussed on the basis of filament formation and rupture in consideration of the Joule heating effect. In addition, we confirm the applicability of PEDOT:PSS resistance random access memory (RRAM) as nonvolatile memory by measuring the stable unipolar switching cycle operations of RRAM based on PEDOT:PSS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
